The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Jul. 30, 1993
Horst Gruning, Wettingen, CH;
ABB Research Ltd., Zurich, CH;
Abstract
In a turn-off high-power semiconductor component, in particular in the form of a GTO, comprising a disk-shaped semiconductor substrate (2) which is disposed concentrically in an annular insulating housing (10) between a disk-shaped cathode contact (4), to which pressure can be applied, and a disk-shaped anode contact (5), to which pressure can also be applied, and which is contacted on the cathode-contact side by a gate contact (7, 21), the cathode contact (4) being connected to one end of the insulating housing (10) via a first lid (11a) and the anode contact (5) to the other end of the insulating housing (10) via a second lid (11b), an outwardly hermetically sealed component (1) being formed, and the gate contact (7) being capable of being fed with a gate current via a gate lead (8) brought to the outside, a connection to the gate unit is achieved with low mutual inductance with a minimum of alterations compared with conventional components as a result of the gate lead (8) being of rotationally symmetrical design and being disposed concentrically with respect to the cathode contact (4) and of the gate lead (8) being electrically isolated from the cathode contact (4) by a single insulator.