The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Oct. 30, 1992
Applicant:
Inventors:
Chien-Shing Pai, Bridgewater, NJ (US);
Yih-Cheng Shih, Macungie, PA (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437238 ; 437195 ; 437228 ; 437978 ; 748D / ;
Abstract
A method of forming an interlevel dielectric suitable for use with semiconductor integrated circuits is disclosed. The dielectric illustratively includes a triple layer sandwich of ozone-TEOS formed between two layers of plasma-enhanced TEOS. The dielectric is capable of filling high-aspect ratio trenches between runners. The ozone-TEOS is formed at a high pressure (approximately 90 Torr) to reduce hydrogen absorption. The reduced-hydrogen content ozone-TEOS is less susceptible to moisture formation and, therefore, presents less risk of degrading subsequently formed aluminum runners.