The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Dec. 30, 1992
Jong Y Shin, Seoul, KR;
Suk B Ma, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
A method for making a polycrystalline silicon thin film by crystallizing an amorphous silicon thin film at a low temperature of 500.degree. C. to 600.degree. C. Over a glass substrate is deposited a microcrystalline silicon seed layer having a thickness of 100 .ANG. to 500 .ANG., using the chemical vapor deposition method. Over the microcrystalline silicon seed layer, a hydrogen-containing amorphous silicon layer is formed by chemical vapor deposition, at a temperature of 180.degree. C. to 270.degree. C., which is then crystallized to form a polycrystalline silicon thin film. A hydrogen-containing amorphous silicon layer having a thickness of 300 .ANG. to 500 .ANG. may be formed over the glass substrate. In this case, the hydrogen-containing amorphous silicon layer is crystallized at a temperature of 600.degree. C., to form a polycrystaline seed layer. Over the polycrystalline silicon seed layer, another hydrogen-containing amorphous silicon layer is formed which is then crystallized by a heat treatment, to form a polycrystalline thin film. The heat treatment is carried out at a temperature of 580.degree. C. to 600.degree. C. for a period of 20 hours to 50 hours.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile