The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 1994
Filed:
Jun. 03, 1993
Rick C Jerome, Monument, CO (US);
Diane R Williams, Colorado Springs, CO (US);
Kurt D Humphrey, Colorado Springs, CO (US);
United Technologies Corporation, Hartford, CT (US);
Abstract
A method of manufacturing various types of silicon devices, such as complementary bipolar PNP and NPN transistors, in a Silicon On Insulator ('SOI') Integrated Circuit ('IC'), the SOI IC having a substrate, a buried insulating layer disposed above the substrate, and a silicon device layer disposed above the insulating layer. Vertical transistors may be formed in the device layer such that each transistor is fully dielectrically isolated from another and also from other similarly manufactured silicon devices in the silicon device layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile