The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 1994

Filed:

Apr. 16, 1993
Applicant:
Inventors:

Chen-Chi P Chang, Newport Beach, CA (US);

Mei F Li, Mission Viejo, CA (US);

Assignee:

Hughes Aircraft Company, Los Angeles, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; G11C / ;
U.S. Cl.
CPC ...
365185 ; 365182 ; 365900 ; 257317 ; 257314 ; 257320 ; 257321 ;
Abstract

Each unit cell (10) of a flash EEPROM array (50) includes a control gate (38) having a section (38b) disposed in series between a program section (34a) of a floating gate (34) and a source (18) to provide threshold voltage control for erasure. The floating gate (34) further has an erase section (34b) which extends from the program section (34a) around an end of a channel (22) to the source (18). A thin tunnel oxide layer (32) is formed between an end portion (34c) of the erase section (34b) and an underlying portion of the source (18) which enables the floating gate (34) to be erased by Fowler-Nordheim tunneling from the end portion (34c) through the oxide layer (32) to the source (18) with low applied voltages.


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