The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1994
Filed:
Jun. 21, 1993
Lloyd F Linder, Agora Hills, CA (US);
Dwight D Birdsall, Norwalk, CA (US);
Hughes Aircraft Company, Los Angeles, CA (US);
Abstract
A compensating transistor (Q5) is connected in series with the collector of a main transistor (Q3), and a level shifted replica (Vin+V1) of an input signal (Vin) is applied to the base of the compensating transistor (Q5) to maintain a constant voltage difference between the base and collector of the main transistor (Q3) and compensate for base width modulation .DELTA.Vce. A voltage-controlled current source (S1) is responsive to the input signal (Vin) and applies a compensating current .DELTA.Iload which is equal and opposite to the load current variation caused by a change (.DELTA.Vin) in the input voltage (Vin) to the emitter of the main transistor (Q3) to compensate for load current modulation .DELTA.Vbe. Alternatively, the compensating current can be applied to the junction of the base of the main transistor (Q3) and the emitter of pre-distortion transistor (Q4) which has a base connected to receive the input signal (Vin). Another compensating transistor (Q12) applies a current (.DELTA.Ib) which is equal and opposite to a non-linear base current variation to the emitter or collector of the main transistor (Q3) to compensate for current gain modulation .DELTA.Ib. The modulation compensation arrangements are applicable to common-collector, common-base and common emitter amplifiers in single-ended and differential configurations, and to substantially all bipolar and field-effect transistor technologies.