The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 1994
Filed:
Aug. 02, 1993
Joel L Goodrich, Westford, MA (US);
Christopher C Souchuns, Ashland, MA (US);
M/A-COM, Inc., Lowell, MA (US);
Abstract
A mesa-type PIN diode and method for making same are disclosed. A diode made according to the present invention includes a junction formed in the top surface of the mesa-shaped structure, having an area that is less than (and preferrably, approximately half) the area of the top surface. A highly-doped, N-type conducting layer is formed in the side-walls of the mesa-shaped structure. The resulting diode is subject to greatly reduced charge carrier recombination effects and suffers from much less carrier-to-carrier scattering than conventional diodes. Thus, a diode made according to the present invention is capable of achieving much higher stored charge, lower resistance, lower capacitance, better switching characteristics, and lower power consumption than one made according to the prior art. Particular utility is found, inter alia, in the areas of high-frequency microwave and monolithic circuits.