Ferroelectric memory device with crosstalk protection in reading/writing

Abstract

A plurality of memory cells are constituted by a large number of belt-like first conductive members, a ferroelectric thin film formed on the first conductive members, and a large number of belt-like second conductive members formed on the film in a direction perpendicular to the first conductive members. A reading/writing section performs a reading/writing operation with respect to each memory cell after applying a predetermined voltage to at least memory cells other than a target memory cell to cause ferroelectric polarization corresponding to crosstalk components. A two-terminal switch integrally stacked on each of the memory cells serves to reduce dielectric polarization for the elimination of crosstalk caused in each memory cell.