The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Sep. 30, 1992
Applicant:
Inventors:
Toshiyuki Matsumoto, Ibaraki, JP;
Hirofumi Inada, Amagasaki, JP;
Hiroshi Nittaya, Ikoma, JP;
Masahiro Kato, Kobe, JP;
Assignee:
Sumitomo Metal Industries, Ltd., Oaska, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365 51 ; 365149 ;
Abstract
A gate electrode of a P-channel MOS transistor and a gate electrode of an N-channel MOS transistor which constitute a logic section, a gate electrode of an N-channel MOS transistor and a capacitor electrode which constitute a memory cell section are formed by patterning a first layer of polysilicon, so that the semiconductor device can be manufactured in a considerably simplified process as an SRAM, while taking advantage of the large capacity of a DRAM thereby to improve the yield.