The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Jan. 31, 1992
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
The effective rate of deactivation from the terminal state to the ground state of a rare earth ion doped optical material in a four-level amplifying or lasing scheme may be increased greatly by doping the optical material with two rare earth ions, an activator and a deactivator. Energy transfer occurs between the terminal state in the activator ion and the deactivator ion. The transition from the deactivator to the ground state occurs via phonon emission. By increasing the deactivation rate, the efficiency of the laser and the amplifier is increased.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile