The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Oct. 03, 1991
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device of a field effect transistor having an SOI structure is formed as below. Using a gate electrode 20 as a mask, n type impurities are implanted into an SOI layer of p type to form additional source/drain regions of intermediate concentration. Then, a relatively thin sidewall spacer is formed at the sidewall of the gate electrode. Using the sidewall spacer as a mask, a titanium silicide layer is formed in self-alignment on the surface of the SOI layer. Next, a relatively thick sidewall spacer is formed. Using this sidewall spacer as a mask, n type impurities are implanted to form a source/drain region of high concentration. According to this manufacturing step, over-etching of the source/drain region are prevented in performing anisotropic etching at the time of sidewall spacer formation.