The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Dec. 11, 1990
Applicant:
Inventor:
Yasutaka Kohno, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257402 ; 257327 ; 257388 ; 257412 ; 257633 ;
Abstract
In a semiconductor device having a gate electrode and an insulating film covering the gate electrode on a compound semiconductor substrate, the vector sum of the stress in the gate metal and the stress produced by the insulating film on the gate electrode is zero. A production method of a semiconductor device includes producing a gate electrode having the same but opposite stress of an insulating film by sputtering under an adjusted gas pressure a target of WSi.sub.x and depositing an insulating film covering the gate electrode.