The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Dec. 11, 1992
Applicant:
Inventors:
Toyokazu Fujii, Moriguchi, JP;
Yasushi Naito, Toyonaka, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257377 ; 257383 ; 257384 ; 257385 ; 257413 ; 437177 ; 437189 ; 437192 ; 437200 ;
Abstract
A semiconductor device of the present invention includes a semiconductor substrate, a p-type impurity diffused region formed in the semiconductor substrate, and a polycide interconnection electrically connected to the p-type impurity diffused region. In the semiconductor device, the polycide interconnection includes a first polysilicon film, a refractory metal silicide film formed on the first polysilicon film, and a second polysilicon film formed on the refractory metal silicide film.