The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Oct. 29, 1992
Applicant:
Inventors:
Makoto Takeda, Tenri, JP;
Tadanori Hishida, Kashihara, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257411 ;
Abstract
An insulated gate thin film transistor (TFT) comprises first and second insulating films, and a semiconductor film disposed thereon. The first insulating film is prepared with anodization. The second insulating film is prepared with CVD or sputtering. The semiconductor film is amorphous, or microcrystalline prepared with glow discharge.