The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Mar. 18, 1992
Seigen Otani, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method of forming a Bi system copper oxide superconducting thin film of Bi.sub.2 Sr.sub.2 Ca.sub.n-1 Cu.sub.n O.sub.x (n.gtoreq.2) including at least the equivalent of a pair of a full CuO molecular layer and a full CaO molecular layer, by a layer-by-layer process (an atomic layer piling process) using MBE. In accordance with the method, the CuO and CaO needed for the film are deposited in a pile by alternately depositing CuO in an amount equal to a 1/m portion of a full CuO molecular layer and CaO in an amount equal to a 1/ m portion of a full CaO molecular layer in a manner similar to that used for superlattice structure formation. The alternate deposition of CuO and CaO layer portions is repeated m times where m is an integral number of not less than n. During the deposition process, the deposition time of each CuO portion is X/m, where X is the depositing formation time of one full CuO molecular layer, and the deposition time of each CaO portion is Y/m, where Y is the depositing formation time of one full CuO molecular layer.