The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 16, 1994

Filed:

Jun. 03, 1993
Applicant:
Inventors:

Richard K Kornfeld, San Diego, CA (US);

Ana L Weiland, Encinitas, CA (US);

Mitsunari Okazaki, Fukushima, JP;

Assignees:

Alps Electric Co., Ltd., Tokyo, JP;

Qualcomm Inc., San Diego, CA (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03G / ; H03F / ; H04B / ; H04B / ;
U.S. Cl.
CPC ...
330277 ; 330279 ; 330289 ; 330280 ; 330281 ;
Abstract

An amplifier for a radio transceiver overcomes the problem of gain being dependent on ambient temperature. Transmission power is matched to strength of a received signal by providing matched dual gate FET amplifier stages in both the transmitter and receiver portions of the transceiver. Changes in gain due to temperature are compensated for by detecting changes in the FET drain current by measuring the source voltage of the amplifier. The FET source voltage is compared to a reference voltage, and the output signal resulting from the comparison is provided as a control signal to one of the FET gates.


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