The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
Dec. 17, 1990
Noriyuki Tanino, Itami, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A microwave integrated circuit comprises a first field effect transistor (FET) whose source is grounded via a capacitor and is connected to a source bias constant current source and to the drains of second field effect transistors whose gates are connected to a voltage power supply, an input matching circuit which is connected between the gate of the first FET and an input terminal, and an output matching circuit which is connected between the drain of the first FET and an output terminal. A drain current of the first FET having an almost constant value flows independent of variations in the direct current transistor characteristics and a rapid switching response is obtained when the first FET is driven on or off by a pulse.