The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
Sep. 04, 1992
Applicant:
Inventors:
Robert Hodges, Euless, TX (US);
Frank Bryant, Denton, TX (US);
Assignee:
SGS-Thomson, Carrollton, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257647 ; 257506 ; 257371 ; 257586 ; 257912 ; 257622 ; 257914 ; 257905 ; 437 69 ; 437 70 ; 437 72 ;
Abstract
A method is provided for forming isolated regions of oxide of an integrated circuit, and an integrated circuit formed according to the same. A pad oxide layer is formed over the integrated circuit. A nitrogen doped polysilicon layer is formed over the pad oxide layer. A thick nitride layer is then formed over the nitrogen doped polysilicon layer. An opening is formed in the nitride layer and the nitrogen doped polysilicon layer exposing a portion of the pad oxide layer. The nitrogen doped polysilicon layer is annealed encapsulating the polysilicon layer in silicon nitride. A field oxide region is then formed in the opening.