The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
Mar. 30, 1993
Abstract
A thin film transistor gate structure with a three-dimensional multichannel structure is disclosed. The thin film transistor gate structure according to the present invention comprises source/drain electrodes formed so as to be spaced from and opposite to each other on a substrate; semiconductive layers, comprised of a plurality of sub-semiconductive layers, each formed in a row, each end of the sub-semiconductive layers being in ohmic-contact with the source/drain electrodes; gate insulating layers surrounding each of the semiconductive layers; and gate electrodes surrounding each of the gate insulating layers. Accordingly, the whole outerlayers of each sub-semiconductive layer surrounded by the gate electrodes serve as channel regions. As a result, the effective channel area increases, thereby improving the channel conductance and current driving ability.