The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
Nov. 06, 1991
Applicant:
Inventors:
George Argos, Jr, Colorado Springs, CO (US);
Thottam S Kalkur, Colorado Springs, CO (US);
Assignee:
Ramtron International Corporation, Colorado Springs, CO (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; G11C / ; G11C / ;
U.S. Cl.
CPC ...
257295 ; 257296 ; 365145 ; 365149 ;
Abstract
A capacitor for a semiconductor structure is formed having a substrate, a stack of a buffer layer and a layer of ferroelectric material, and a top electrode. The capacitor can also have a layer of polysilicon between the substrate and the buffer layer. A method for forming the same, through establishing a substrate, a buffer layer and a layer of ferroelectric material, defining and annealing the buffer layer and layer of ferroelectric material, and establishing a top electrode, is also disclosed.