Method of making a semiconductor integrated device having gate sidewall

Abstract

A method of making a semiconductor device including a plurality of gate electrodes (6a, 6b, 6c, 6d) arranged on the surface of a semiconductor substrate (1) with insulating layers (5, 8) covering the top and the side walls of the gate electrodes. The spaces between the opposing side walls of adjacent gate electrodes on the surface of the element isolation region (2) are smaller than twice the thickness of the thinnest insulating layer (8) among the insulating layers of the side walls of the gate electrodes on the surface of the active regions. The space (14) between the gate electrodes on the element isolation region is filled with the insulating isolation layer (8) so that unevenness in the underlying portion on the element isolation region on which the conductive interconnection layer (10) to be formed is reduced, preventing thinning of the conductive interconnection layer and disconnection due to excessive etching of a resist film in patterning the conductive interconnection layer.