The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 1994
Filed:
May. 01, 1992
Applicant:
Inventors:
Mohammed A Fathimulla, Ellicott City, MD (US);
Thomas C Loughran, Columbia, MD (US);
Assignee:
AlliedSignal Inc., Morris Township, Morris County, NJ (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
156643 ; 156646 ;
Abstract
InP is etched by reactive ion etching using a mixture of SiCl.sub.4 and CH.sub.4 or a mixture of SiCl.sub.4 and H.sub.2. A mask is placed on the InP and then it is placed into a RIE chamber having a pressure between approximately 5 mTorr and approximately 50 mTorr. The InP substrate is etched at a substrate temperature of less than 150.degree. C.
Fathimulla, Mohammed. (1994). Method for etching indium based iii-v compound semiconductors (U.S. Patent No. 5338394). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5338394
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile