Minimizing the programming time in a semiconductor integrated memory

Abstract

A semiconductor integrated memory circuit includes therein a PROM having a plurality of bit cell groups, each of which includes a set of data bit cells for storing data and a set of check bit cells for storing a set of check bits corresponding to a content of the set of data bit cells for correction of error in the data stored in the set of data bit cells. A check bit input circuit is provided which can ensure that, when data to be programmed into a selected set of data bit cells is the same as a data erased condition of the PROM, a set of check bits having the same value as the data erased condition are held in a corresponding set of check bit cells. Therefore, it is possible to omit the writing of that data and a corresponding check bit set into a set of data bit cells and a corresponding set of check bit cells of the PROM, which are address-designated by a given address. An error correction circuit reads a set of data bits and a set of check bits from one set of data bit cells and one set of check bit cells in accordance with a given address for correcting an error on the basis of the read-out set of data bit cells and the read-out set of check bit cells, if an error exists.