The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Mar. 17, 1993
Jean Jimenez, Voiron, FR;
SGS-Thomson Microelectronics S.A., Saint-Genis Pouilly, FR;
Abstract
An avalanche diode structure incorporated in an integrated circuit is embodied by the lateral junction between two adjacent buried layers having opposite conductivity types and a high doping level. This diode includes: a first highly doped buried layer of the same first conductivity type as the integrated circuit substrate; a second highly doped buried layer of the second conductivity type, surrounding the first buried layer and laterally contacting the first layer; and a third low doped buried layer of the second conductivity type disposed beneath the first buried layer and overlapping with respect to the second layer so as to also contact a portion of the second buried layer.