The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Oct. 05, 1992
Minoru Nigaki, Hamamatsu, JP;
Tuneo Ihara, Hamamatsu, JP;
Toru Hirohata, Hamamatsu, JP;
Tomoko Suzuki, Hamamatsu, JP;
Kimitsugu Nakamura, Hamamatsu, JP;
Norio Asakura, Hamamatsu, JP;
Masami Yamada, Hamamatsu, JP;
Yasuharu Negi, Hamamatsu, JP;
Tomihiko Kuroyanagi, Hamamatsu, JP;
Yoshihiko Mizushima, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu, JP;
Abstract
This invention relates to a semiconductor photo-electron-emitting device for emitting photoelectrons excited from the valence band to the conduction band by incident photons on a semiconductor layer. The device includes a Schottky electrode formed on the emitting surface on a surface of the semiconductor layer, and a conductor layer formed on a surface opposite to the emitting surface. A set bias voltage is applied between the Schottky electrode and the conductor layer to accelerate photoelectrons generated by the excitation of incident photons to the emitting surface and to transfer the accelerated photoelectrons from an energy band of a smaller effective mass to an energy band of a larger effective mass.