The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Nov. 13, 1992
Goldstar Electron Co., Ltd., , KR;
Abstract
A method of making a semiconductor memory device wherein a storage node having a plurality of pillars, capable of increasing the storage node surface area and thus the cell capacitance. The storage node is formed by depositing a storage node polysilicon film to have a thickness of 5,000 .ANG. to 6,000 .ANG. over a semiconductor substrate, forming a photoresist pattern over the polysilicon film in a direct electron beam writing manner, and etching the polysilicon film up to a depth of 1,000 .ANG. from the upper surfaces of a gate and a bit line by using the photoresist pattern. The formed storage node has a plurality of uniformly spaced pillars. Alternatively, the storage node is formed by forming a smoothing insulating film over the semiconductor substrate depositing a storage node polysilicon film over the smoothing insulating film, primarily photo exposing the semiconductor substrate using a glass mask having phase shifters, secondarily photo exposing the semiconductor substrate under the condition of rotating 90.degree. the semiconductor substrate, to form a check-board photoresist pattern, and patterning the polysilicon film using the photoresist pattern as a mask. The formed storage node has a plurality of pillars arranged independently or intersectionally.