The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Mar. 02, 1993
Applicant:
Inventors:
Porponth Sichanugrist, Kanagawa, JP;
Tetsuro Nii, Tokyo, JP;
Assignee:
Showa Shell Sekiyu K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-4 ; 437 24 ; 437937 ; 136258 ;
Abstract
A process for producing an integrated solar cell comprising deposited unit cells having a p-i-n junction, with an n-type layer forming an n-p Junction between unit cells comprising a microcrystalline amorphous silicon layer, in which said microcrystalline amorphous silicon layer is subjected to a hydrogen discharge treatment for a given period of time. By the hydrogen discharge treatment, the film resistance of the n-type layer is reduced to accelerate ohmic property with a p-type layer thereby achieving increased conversion efficiency.