The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Oct. 19, 1992
Takaho Tanaka, Tsukuba, JP;
Yutaka Kamimura, Tsuchiura, JP;
Shigeki Otani, Tsukuba, JP;
Yoshio Ishizawa, Tsukuba, JP;
National Institute for Research in Inorganic Materials, Tsukuba, JP;
Abstract
It is an object of the present invention to obtain a high quality YB66 crystal by lowering the temperature of the molten zone and growing a crystal by deposition growth under an incongruent condition. A method for preparing a yttrium 66 boride crystal by the floating zone method by use of a YB66 polycrystalline rod. A YB66 crystal having a composition with an atomic ratio B/Y within a range of from 50 to 75, is grown under such conditions that the melt has a composition (an atomic ratio B/Y) different from the raw YB66 polycrystalline rod and the growing YB66 crystal, and that an equilibrium is maintained at the growth interface. When the atomic ratio B/Y of the starting material is within the range of from 50 to 62 and the atomic ratio B/Y of the melt is within the range of from 40 to 62, it is possible to attain the atomic ratio B/Y of the growing crystal within the range of from 50 to 62. When the atomic ratio B/Y of the starting material is within the range of from 62 to 75 and the atomic ratio B/Y of the melt is within the range of from 62 to 93, it is possible to attain the atomic ratio B/Y of the growing crystal within the range of from 62 to 75.