The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 1994
Filed:
Jun. 24, 1992
Applicant:
Inventor:
Kimitoshi Satou, Itami, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
73727 ; 296211 ;
Abstract
A small, precise semiconductor pressure sensor has a flat, thin diaphragm of uniform thickness that is formed by a simple process. A first silicon substrate and a second silicon substrate are bonded to each other with an interface insulating film interposed between them and circuitry including gauge resistors is fabricated on the primary surface of the second silicon substrate. The interface insulating film may be disposed in the recess of a vacuum chamber and may have a two layer structure. If alignment marks are formed, the circuitry can be accurately formed relative to the vacuum chamber.