The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1994
Filed:
Jul. 13, 1993
Takeshi Nomura, Chiba, JP;
Yukie Nakano, Chiba, JP;
Akira Satoh, Akita, JP;
Tomohiro Arashi, Chiba, JP;
TDK Corporation, Tokyo, JP;
Abstract
A multilayer ceramic chip capacitor includes alternately stacked dielectric layers and internal electrode layers. The dielectric layers contain barium titanate as a major component and magnesium oxide, manganese oxide, barium oxide and/or calcium oxide, silicon oxide and optionally, yttrium oxide as minor components in such a proportion that there are present 0.1-3 mol of MgO, 0.05-1.0 mol of MnO, 2-12 mol of BaO+CaO, 2-12 mol of SiO.sub.2 and up to 1 mol of Y.sub.2 O.sub.3 per 100 mol of BaTiO.sub.3. The capacitor satisfies the standard temperature dependence of capacitance and shows a minimized change of capacitance with time under an applied DC electric field and a long insulation resistance life. Where the dielectric layers contain 0.1-3 mol of MgO, 1-5 mol of Y.sub.2 O.sub.3, 2-12 mol of BaO+CaO, and 2-12 mol of SiO.sub.2 per 100 mol of BaTiO.sub.3, the capacitor shows improved DC bias performance.