The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 1994

Filed:

Jul. 09, 1991
Applicant:
Inventors:

Takeo Ono, Sagamihara, JP;

Masahiro Okuda, Sagamihara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 13 ; 257 21 ; 257 96 ; 257 97 ; 257197 ; 372 45 ; 372 46 ; 372 48 ; 372 50 ;
Abstract

An optical semiconductor device with wavelength selectivity comprises a substrate, a collector layer provided on said substrate and composed of a semiconductor having a first conductive type, a multiple quantum well layer provided on said collector layer, a base layer provided on said multiple quantum well layer and composed of a semiconductor having a second conductive type, said base layer consisting of an active layer, and first and second semiconductor layers with said active layer sandwiched therebetween and having a wider band gap than said active layer, said base layer and said multiple quantum well layer propagating light, an emitter layer provided on said base layer and composed of a semiconductor having the first conductive type, and a collector electrode, a base electrode and an emitter electrode electrically connected to said collector layer, base layer and emitter layer, respectively.


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