The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1994
Filed:
Jul. 30, 1993
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A method of making thin film transistors such that the first conductive layer of a thin film transistor is formed with an aluminum system metal having a low electric resistance, and another metal capable of anodic oxidation is deposited to prevent the aluminum system metal from producing hillocks. The metal capable of anodic oxidation and part of the aluminum system metal are changed into an insulator by an anodic oxidation treatment. In all, the gate insulator of the thin film transistor comprises three layers of aluminum oxide, an oxide of the metal capable of anodic oxidation, and silicon nitride. The method makes it possible to form the lower-layer wiring and gate electrode having a low electric resistance and a flawless gate insulator having excellent insulative quality.