The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 1994
Filed:
Oct. 22, 1991
Applicant:
Inventor:
Shuji Nakamura, Anan, JP;
Assignee:
Nichia Kagaky Kogyo K.K., Tokushima, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
117102 ; 117952 ;
Abstract
A method of growing in vapor phase a semiconductor crystal layer supplies a reaction gas to a portion above the surface of a heated substrate so as to be parallel or obliquely to the substrate, and uses a transparent blow tube widened toward its blow port like a funnel to blow a pressing gas, which is inert with respect to the reaction gas, toward the substrate, thereby bringing the reaction gas into contact with the surface of the substrate.