The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
Sep. 28, 1992
Applicant:
Inventor:
Jun Hirai, Kyoto, JP;
Assignee:
Rohm Co., Ltd., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257369 ; 307585 ;
Abstract
A transmission gate having a CMOS structure wherein an NMOS transistor and a PMOS transistor are connected in parallel between an input signal line and an output signal line and a separation layer which separates a transistor formation region for one of the PMOS transistor and the NMOS transistor formed in a substrate from the substrate, wherein the back gates of the respective transistors are constituted to receive an input signal from the input signal line when the one transistor and the other transistor formed in a well region are in a conductive state.