The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
Oct. 16, 1991
Rosemary L Smith, Davis, CA (US);
Scott D Collins, Davis, CA (US);
Other;
Abstract
Low residual stress, stoichiometric or near stoichiometric, silicon nitride and silicon carbide films with thicknesses of one micron or greater are produced by reacting porous silicon with a nitrogen or carbon containing gas, such as ammonia or methane, at an appropriate temperature and pressure. The gas diffuses into the pores and reacts with the silicon skeletal structure. Because the initial structure is porous and the pore spaces provide strain relief during the addition reaction and subsequent volume expansion, the resultant film has relatively low residual stress. Either porous or solid films can be produced. This process provides a means to chemically stabilize porous silicon layers and their morphologies.