The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
May. 11, 1993
Takao Kinoshita, Fukuyama, JP;
Satoshi Saito, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A method of forming a contact is disclosed. The method of the present invention includes the steps of: forming an insulating layer on a silicon compound; forming a contact hole in the insulating layer, the contact hole reaching the silicon compound; forming at least one layer of a refractory material film on an inner wall of the contact hole and on a surface of the insulating layer; forming a silicon containing tungsten layer on the refractory material film by CVD; and growing tungsten on the silicon containing tungsten layer by CVD, to fill the contact hole with the tungsten wherein the silicon containing tungsten layer contains silicon in the range of 0.6 wt. % to 20 wt. %.