The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 26, 1994

Filed:

Jun. 24, 1993
Applicant:
Inventors:

Young J Park, Seoul, KR;

Seok H Lee, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437 52 ; 437 47 ; 437 60 ; 437919 ;
Abstract

Disclosed is a novel DRAM manufacturing method to reduce difficulties due to the high aspect ratio of contact hole for storage electrode. The method comprises the steps of formation of a contact plug on contact areas of bit line and storage electrode at the same time and then, formation of a bit line that is in contact with the contact plug for bit line and finally, making a storage electrode that is as high as the bit line contact with the contact plug for storage electrode.


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