The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
Oct. 28, 1991
Hidetoshi Watanabe, Tokyo, JP;
Hiroshi Komatsu, Tokyo, JP;
Toshiaki Hasegawa, Tokyo, JP;
Toshiyuki Ishimaru, Tokyo, JP;
Sony Corporation, Tokyo, JP;
Abstract
A field emission type emitter comprises: a conductive substrate; an insulating film formed on the conductive substrate; a cavity formed in the insulating film; a cathode formed on the conductive substrate in the cavity; and a gate electrode formed over the insulating film. The gate electrode is preferably made of refractory metal silicide. A polycrystalline silicon film is preferably formed between the gate electrode and the insulating film. The side walls of the insulating film in the portion of the cavity preferably have an inverse tapered shape. In the case where a glass substrate is used, a conductive film is formed on the glass substrate through an insulating film and the cathode is formed on the conductive film in the cavity. Manufacturing methods of the field emission type emitter are also disclosed.