The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 1994
Filed:
Sep. 30, 1992
Applicant:
Inventor:
Manfred Engelhardt, Feldkirchen-Westerham, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
156643 ; 437225 ; 20419225 ; 2041923 ;
Abstract
Method for structuring a layer. For structuring a layer that is arranged on a lower layer of a different material using a plasma etching process, a target (14) of the material of the lower layer is arranged in an etching reactor (1). The etching process is managed such that material is sputtered from the target (14) and is deposited on surfaces of the lower layer exposed in the etching process to essentially the same degree to which the lower layer is eroded by the etching process. The method is particularly suited for structuring a polysilicon layer that is arranged on a gate oxide layer.