The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1994
Filed:
Aug. 23, 1993
Applicant:
Inventors:
Apparajan Ganesan, Salem, NH (US);
Paul F Ferguson, Jr, Tewksbury, MA (US);
David H Robertson, Somerville, MA (US);
Assignee:
Analog Devices, Inc., Norwood, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K / ; H03K / ; H03F / ;
U.S. Cl.
CPC ...
307491 ; 3072968 ; 307304 ; 307307 ; 307568 ;
Abstract
Gain linearity problems caused by impact ionization in a active MOS device are avoided by connecting an MOS shield device in series with the active MOS device so that the overall supply voltage is split across two devices, keeping both devices in a region of operation well below where impact ionization becomes a significant problem. The gate of the MOS shield device is maintained at a voltage proportional to its drain voltage, thereby keeping the device in the saturation mode and avoiding an abrupt mode change associated with prior art shield circuits.