The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 1994
Filed:
Aug. 27, 1992
Applicant:
Inventor:
Hitoshi Kudoh, Kyoto, JP;
Assignee:
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257368 ; 257213 ; 257288 ; 257401 ;
Abstract
A semiconductor device includes plural transistors in which the transistors themselves share a gate and a channel region and posses three or more source and drain regions. In such a configuration, a drain current is determined by the voltage application condition (potential difference of all source and drain regions). Therefore, assuming one of the three source and drain regions to be a control terminal (disturbance terminal) instability or drift of the transistor operation may be intentionally produced by applying proper voltages to each of the three source and drain regions.