The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1994
Filed:
Oct. 29, 1991
Applicant:
Inventors:
Assignee:
Olympus Optical Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365145 ; 36518901 ;
Abstract
According to this invention, there is provided a memory element and a matrix memory cell array including memory cells each having a nonlinear conductivity bipolar switching element constituted by a multi-layered structure which performs writing/reading operations of a polarization state of a ferroelectric body, i.e., a recording medium of the memory cell, as data and which is constituted by an insulating layer of a predetermined-thickness Langmuir-Blodgett film using most of a switching drive current as a direct tunnel current and conductive layers formed on both the surfaces of the insulating layer.