The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 1994

Filed:

Jun. 02, 1993
Applicant:
Inventor:

Hideo Tsuiki, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365 45 ; 365185 ; 36518901 ;
Abstract

A sequential access type memory medium of a large memory capacity is composed of a number of semiconductor memory modules, each including a semiconductor memory device and necessary peripheral circuits accommodated in a square package. The same number of terminals are provided on each of four sides of the square package. The terminals on the four sides are so wired that the same kind of signal is transferred through positionally corresponding terminals of four sides of the square package, and the terminals on one side are of a plug type and the terminals on the remaining three sides are of a socket type which can be fitted and connected with the plug type terminal so as to interconnect corresponding signal lines. In addition, positionally corresponding socket type terminals of three sides of each memory module are interconnected so as to interconnect the terminals for the same signal. Thus, a plurality of memory modules are interconnected in an arbitrary order and in arbitrary location with using no printed circuit board and with a high expandability, so that in each semiconductor memory module, an address signal is generated on the basis of the synchronous signal supplied from an external, and the synchronous signal is supplied to the just succeeding semiconductor memory circuit after the data reading of the first mentioned semiconductor memory circuit has been completed.


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