The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1994
Filed:
Dec. 22, 1992
Howard D Bartlow, Wilsonville, OR (US);
Spectrian, Inc., Mountain View, CA (US);
Abstract
The feeds to the emitter, base, and collector of an RF power transistor (source, drain, gate feeds of an RF FET) are configured so that negative mutual coupling therebetween is enhanced and positive mutual coupling therebetween is reduced. The emitter and base feeds include elongated portions which are generally parallel to each other with bonding pads provided on the elongated portions so that emitter and base currents flow in the same direction in the elongated portions and in the same direction as collector currents below. Interdigitated contact fingers extend from the elongated portions and contact the emitter region and the base region, respectively. When positive coupling of collector current and emitter current to the controlling base current is reduced or eliminated, the major thermal imbalance problem of operating RF transistors is also reduced or eliminated. Performance, linearity, efficiency, gain, and ruggedness are all enhanced in devices designed to utilize this invention.