The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1994
Filed:
Feb. 08, 1993
Max Planck Gesellschaft zur Foerderung der Wissenschaften e.V., Goettingen, DE;
Abstract
A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth layer of a highly doped n-type semiconducting material similar to the second layer. First and second electrical connections are provided to the fourth layer and to at least one of the first and second layers. A plurality of pairs of Dirac-delta doped monoatomic layers are in the third layer, with the first monoatomic layer of each pair being a layer of donors and with the second monoatomic layer of each pair being acceptors spaced from the donor layer and positioned on the side thereof facing the fourth layer.