The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 1994
Filed:
Jan. 04, 1993
Applicant:
Inventors:
Tuan A Vo, Hawthorne, CA (US);
Mohamad M Mojaradi, Los Angeles, CA (US);
Assignee:
Xerox Corporation, Stamford, CT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437 31 ; 437 74 ; 437 59 ; 148D / ; 257339 ;
Abstract
A high voltage bipolar transistor fabricated on a CMOS substrate without adding any additional process steps. During the CMOS n-well mask and implant steps an n-well is formed for the transistor. Next, during the CMOS field and deep boron implant steps a circular p-field is formed within the n-well. Finally, during the CMOS p+ mask and implant steps the p+ emitter is formed. The presence of the p-field between the emitter and n+ base provides high voltage protection.
Quick Actions:
Vo, Tuan. (1994). Method of making high voltage pnp bipolar transistor in cmos (U.S. Patent No. 5328859). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5328859
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile