The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 12, 1994

Filed:

May. 27, 1993
Applicant:
Inventors:

Tetsuro Hanawa, Hyogo, JP;

Maria Op de Beeck, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
1566611 ; 1566591 ; 156904 ; 430313 ; 430314 ; 430323 ; 430325 ; 437225 ; 437228 ; 437229 ;
Abstract

A method of manufacturing semiconductor devices is provided which is improved so as to form a resist pattern even in a substrate having a step thereon with well controlled dimensional precision, and carry out etching of an underlying substrate with well controlled dimensional precision. An underlying film of an organic substance having the properties of sublimation, photo absorption and insolubility in an organic solvent is formed on a semiconductor substrate. A resist is applied onto the underlying film. Light is selectively irradiated on the resist. The resist is developed to form a resist pattern. The semiconductor substrate is etched with the resist pattern used as a mask.


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