The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1994
Filed:
Jul. 01, 1992
Applicant:
Inventor:
Tatsuya Ohori, Kawasaki, JP;
Assignee:
Fujitsu Limited, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257194 ; 257 12 ; 257 14 ; 257615 ; 257613 ;
Abstract
A heterojunction semiconductor device comprises a semi-insulating substrate, a channel layer comprising first and second sub-layers provided on the substrate for sustaining a two-dimensional carrier gas therein, a carrier supplying layer of a doped semiconductor material provided on the channel layer, a source electrode a drain electrode and a gate electrode provided on the carrier supplying layer. The first and second sub-layers have respective first and second saturation drift velocities of carriers such that the first saturation drift velocity is substantially larger than said second saturation drift velocity.