The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1994
Filed:
Jul. 01, 1992
Tatsuya Ohori, Kawasaki, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A heterojunction semiconductor device comprises a semi-insulating substrate, a channel layer comprising first and second sub-layers provided on the substrate for sustaining a two-dimensional carrier gas therein, a carrier supplying layer of a doped semiconductor material provided on the channel layer, a source electrode a drain electrode and a gate electrode provided on the carrier supplying layer. The first and second sub-layers have respective first and second saturation drift velocities of carriers such that the first saturation drift velocity is substantially larger than said second saturation drift velocity.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile