The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 1994
Filed:
Dec. 15, 1992
Applicant:
Inventors:
Assignee:
Nikko Kyodo Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437105 ; 437176 ; 437245 ; 437912 ;
Abstract
A method of fabricating a Schottky electrode by the adsorption of thin layer with not more than 10 monolayers of a metal whose oxide is stable on a III-V compound semiconductor substrate such as InP or on a substrate, the surface on which epitaxial layer is grown, and the successive oxidation of the thin metal film is disclosed. Since the generation of dangling bonds at the interface due to the elastic strain between the substrate and the metal oxide can be prevented, it becomes possible to obtain a Schottky electrode with a high Schottky barrier height and thus to fabricate MESFETs and Schottky diodes having good characteristics such as a small reverse leak current and a large break-down voltage.