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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5326709 B1

PDFFull Text
Date of Patent:
Jul. 05, 1994

Filed:

Dec. 18, 1992

Wafer testing process of a semiconductor device comprising a redundancy

Applicant:
Inventors:

Hong-bae Moon, Jeonlabuk-do, KR;

Bon-youl Ku, Daeku, KR;

Gi-seung Song, Kyungki-do, KR;

Tae-wook Seo, Kyungki-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Kyungki-do, KR;

Attorney:

Cushman, Darby & Cushman

Primary Examiner:

Olik Chaudhuri

Assistant Examiner:

H Jey Tsai

Int. Cl.
CPC ...
G01R / ; H01L / ;
U.S. Cl.
CPC ...
437-8 ; 437922 ; 148D / ;
Abstract

A wafer testing process of a semiconductor device provided with a redundancy circuit. The process comprises a step of removing a passivation film above a pad and link portion, pre-laser testing, laser-repairing, and final quality marking using an off-line inking method. Therefore, fabrication-test processes are simplified to one step by adopting the off-line inking method, thereby achieving productivity improvement, quality enhancement, and reduction of throughput time.

Find Patent Forward Citations

Moon, Hong-bae. (1994). Wafer testing process of a semiconductor device comprising a redundancy (U.S. Patent No. 5326709). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5326709

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